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Product

Gallium Arsenide Wafers

Epitaxial wafers made from gallium arsenide, a compound semiconductor used in lasers, LEDs, solar cells and radio-frequency chips.

Covered in 1 MetalsCost.com News Intelligence article, most recently on August 25, 2026.

Form Single-crystal compound semiconductor wafer (GaAs)
Key Advantage Higher electron mobility, direct bandgap vs. silicon
Major Applications RF power amplifiers, satellite comms, lasers, LEDs, space solar cells
Market Size Roughly $1.4 billion in 2026, projected to reach $3.0 billion by 2033
Manufacturing Bulk crystal grown, sliced into wafers, epitaxial layers added (MOCVD)

Overview

Gallium arsenide wafers are single-crystal substrates made from a compound of gallium and arsenic rather than silicon, chosen wherever a chip needs to switch or emit light faster than silicon allows. GaAs electrons move with much higher mobility than silicon's, and because it's a direct-bandgap material it can emit light efficiently — a property silicon, an indirect-bandgap material, simply doesn't have.

Who Consumes It

Smartphone and telecom hardware makers are major buyers, since GaAs RF power amplifiers and switches handle a large share of the radio-frequency components in mobile handsets and satellite communication equipment, a demand base that's grown further with 5G rollout. GaAs also underlies most high-brightness LEDs and semiconductor lasers, and in multi-junction form it's the substrate of choice for space-grade solar cells.

Sources

Coverage